Channelled substrate double heterostructure lasers

Details Channelled substrate double heterostructure lasers Channelled substrate double heterostructure lasers

H - Electricity

01

S

345/32

H01S 5/223 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1121492

Abstract of the Disclosure In fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapour deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device. -i-

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