Charge controlled avalanche photodiode and method of making...

Details Charge controlled avalanche photodiode and method of making... Charge controlled avalanche photodiode and method of making...

H - Electricity

01

L

H01L 21/18 (2006.01) H01L 21/00 (2006.01) H01L 31/107 (2006.01)

Patent

CA 2473223

The present invention includes an epitaxial structure (16) grown on a semi- insulating InP substrate (12). First, a buffer layer (14) is grown to isolate defects originated from substrates (12). Then an n-type layer (18) is grown to serve as n-contact layer to collect electrons. Next, a multiplication layer (20) is grown to provide avalanche gain for the APD device (10). Following that, an ultra-thin charge control layer (22) is grown with carbon doping. An absorption layer (24) is grown to serve as the region for creating electronhole pairs due to a photo-excitation. Finally, a p-type layer (28) is grown to serve as p-contact layer to collect holes.

La présente invention concerne une structure épitaxiale que l'on fait croître sur un substrat InP semi-isolant. L'invention concerne par ailleurs un procédé consistant à faire croître successivement les couches suivantes : une couche tampon destinée à isoler les défauts provenant des substrats ; une couche de type n servant de couche de contact de type n pour collecter des électrons ; une couche de multiplication destinée à fournir au dispositif PDA un gain avec effet d'avalanche ; une couche ultramince de contrôle de charge avec dopage au carbone ; une couche d'absorption servant de région pour créer des paires électron-trou par photoexcitation ; ainsi qu'une couche de type p servant de couche de contact de type p pour collecter des trous.

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