Charge coupled circuit arrangements and devices

Details Charge coupled circuit arrangements and devices Charge coupled circuit arrangements and devices

G - Physics

11

C

352/82.24

G11C 11/40 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1085052

ABSTRACT OF THE DISCLOSURE: In a CCD introduction of charge with good linearity and low signal input noise sensitivity is obtained by the control of punch-through of a depletion region associated with an input storage site to a rectifying barrier bounding a region in the semiconductor body separated from the CCD channel and forming a source of charge carriers to be stored and transported. In one form the source of charge carriers is an opposite conductivity type substrate on which is present a region of the one conductivity type in which a surface channel CCD is present. In other forms, including both surface channel CCD's and buried channel CCD's, buried layers are employed as source regions. Figure 1 suitable for abstract publication. -41-

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