Charge coupled device

Details Charge coupled device Charge coupled device

H - Electricity

01

L

356/197, 352/82.

H01L 21/22 (2006.01) H01L 29/10 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1139879

ABSTRACT OF THE DISCLOSURE A two-phase buried-channel charge coupled device wherein a doped layer of first type conductivity is formed with a predetermined doping con- centration under a surface of a semiconductor body of second type conductiv- ity. A first plurality of electrodes is formed in spaced relationship on the surface over the doped layer. Particles generating the first type conductiv- ity are ion implanted into regions of the doped layer between the first plur- ality of electrodes, increasing the doping concentration of the portion of the doped layer disposed beneath such spaced regions. A second plurality of electrodes is formed over the increased concentration portions of the doped layer. The first plurality of electrodes provides the transfer gates of the device and the second plurality of electrodes provides the storage gates for the device.

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