G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.2
G11C 19/28 (2006.01) G11C 11/21 (2006.01) H01L 27/105 (2006.01)
Patent
CA 1203623
ABSTRACT: charge-coupled device. The invention relates to a charge-coupled SPS memory comprising a series input register, a parallel section and a series output register. In order to in- crease the retention time leakage current drain regions are provided beside the memory. Since the charge collect- ed as a result of leakage current is largest during the transport through the outermost registers of the parallel section, only the sides of the parallel section are screened by the said draining regions which preferably consist of dummy registers. Figure 1.
410652
Harwig Hendrik A.
Pelgrom Marcellinus J.m.
Slotboom Jan W.
N.v. Philips Gloeilampenfabrieken
Van Steinburg C.e.
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