Charge-coupled device and method of manufacturing the same

Details Charge-coupled device and method of manufacturing the same Charge-coupled device and method of manufacturing the same

H - Electricity

01

L

356/197, 352/82.

H01L 21/28 (2006.01) H01L 21/339 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1267975

ABSTRACT: "Charge-coupled semiconductor device and method of manufacturing the same". A charge-coupled semiconductor device having a plurality of silicon electrodes (1, 3, 5, 7, 9) for storing and transporting information-carrying charge, which electrodes are located on an insulating layer (21) and are mutually separated by grooves having a width of at most l/um. According to the invention, transfer electrodes (2, 4, 6, 8, 10) are arranged in the grooves, these electrodes being coplanar to the remaining electrodes (1, 3, 5, 7, 9). The thickness of the insulating layer under the transfer electrodes is substantially equal to that under the storage electrodes. The invention also relates to a method of manufacturing a semiconductor device having such an electrode system.

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