G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.22
G11C 11/40 (2006.01) H01L 29/49 (2006.01) H01L 29/768 (2006.01)
Patent
CA 1076257
RCA 69311 Abstract A single layer of polysilicon, separated from the substrate by an insulating layer, is employed to form the transfer electrodes of a charge coupled device (CCD). The regions of the single layer which are operated as electrodes are of one conductivity type and the regions between these electrodes are of opposite conductivity type. While these opposite conductivity regions are of relatively low resistivity, electrical isolation between adjacent electrodes is provided by the semiconductor junctions defining the boundaries between the electrode regions and the opposite conductivity regions.
244374
Henry William N.
Rodgers Robert L. (3rd)
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