Charge coupled image sensor device

H - Electricity – 01 – L

Patent

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345/1

H01L 31/04 (2006.01) H01L 27/148 (2006.01) H01L 29/49 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1062355

ABSTRACT OF THE DISCLOSURE A CCD image sensor having impurity-doped polycrystalline silicon electrodes and an oxygen doped polycrystalline silicon layer lying between the electrodes and overlying a photosensitive portion of a substrate so as to provide an improved passivation in that low leakage current between electrodes result and a high sensitivity to shorter wave lengths of light are obtained as compared with devices utilizing pure polycrystalline layers.

250989

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