H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/1
H01L 31/04 (2006.01) H01L 27/148 (2006.01) H01L 29/49 (2006.01) H01L 29/768 (2006.01)
Patent
CA 1062355
ABSTRACT OF THE DISCLOSURE A CCD image sensor having impurity-doped polycrystalline silicon electrodes and an oxygen doped polycrystalline silicon layer lying between the electrodes and overlying a photosensitive portion of a substrate so as to provide an improved passivation in that low leakage current between electrodes result and a high sensitivity to shorter wave lengths of light are obtained as compared with devices utilizing pure polycrystalline layers.
250989
Abe Motoaki
Kawana Yoshiyuki
Matsumoto Hiryouki
LandOfFree
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