Charge-coupled semiconductor device with dynamic control

Details Charge-coupled semiconductor device with dynamic control Charge-coupled semiconductor device with dynamic control

G - Physics

11

C

345/1, 350/54

G11C 19/28 (2006.01) G11C 27/00 (2006.01) H01L 27/148 (2006.01) H04N 3/15 (2006.01)

Patent

CA 1243112

32 ABSTRACT: "Charge-coupled semiconductor device with dynamic control." In a CCD, especially in an image sensor device, the information density can be doubled in that the electrodes (21,22,31,32...) are switched separately between a clock signal and a reference signal. Clock signals and reference signals are obtained as output signals of a shift register (13) controlled by a multi-phase clock, which is realized, for example, in C-MOS technology. Information at the input terminal (107) of the first stage (101) of the shift regis- ter (13) determines, after having been passed on or not having been passed on depending upon the clock pulse signals of the register clock, the output signal of the next stages (101) of the shift register (13) and hence the voltage variation at the electrodes (21,22,31,32...) connected to the outputs (113) of the stages (101).

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