Charge-flow transistor and instrument employing the same

Details Charge-flow transistor and instrument employing the same Charge-flow transistor and instrument employing the same

H - Electricity

01

L

356/124, 356/196

H01L 29/40 (2006.01) G01N 27/414 (2006.01) H01L 29/423 (2006.01) H01L 29/49 (2006.01) H01L 49/00 (2006.01)

Patent

CA 1093215

ABSTRACT OF THE DISCLOSURE A charge-flow transistor having a gapped gate electrode and a thin-film sensor material in the gap, which sensor material is sensitive to a property of the ambient environment and has a surface conductance that differs substantially from the bulk conductance thereof. The charge-flow transistor is shown as part of an instrument operable to measure said property.

300993

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