Charge-flow transistors having metallization patterns

Details Charge-flow transistors having metallization patterns Charge-flow transistors having metallization patterns

H - Electricity

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356/172

H01L 27/00 (2006.01) G01N 27/414 (2006.01) H01L 21/765 (2006.01) H01L 27/088 (2006.01) H01L 27/105 (2006.01) H01L 29/06 (2006.01) H01L 29/417 (2006.01) H01L 29/423 (2006.01) H01L 29/43 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1114072

ABSTRACT OF THE DISCLOSURE A charge-flow transistor having a source region and a drain region in a semiconductor substrate, a gate insulator, and a gapped gate electrode with a thin-film material having some electrical conductance disposed in the gap thereof. Metallization patterns are provided to reduce the detrimental effect of parasitic currents that appear within the transistor. There is disclosed also a plurality of such transistors in a single die with metallization to reduce any effect of parasitic currents between the transistors of the plurality.

311263

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