C - Chemistry – Metallurgy – 08 – G
Patent
C - Chemistry, Metallurgy
08
G
C08G 61/02 (2006.01) C01B 31/02 (2006.01) C08G 83/00 (2006.01) H01L 31/072 (2006.01) H01L 51/30 (2006.01) H01L 51/40 (2006.01) H01L 51/50 (2006.01)
Patent
CA 2312140
A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron- accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film.
Ata Masafumi
Ramm Matthias
Gowling Lafleur Henderson Llp
Research Institute Of Innovative Technology For The Earth
Sony Corporation
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