G - Physics – 11 – C
Patent
G - Physics
11
C
356/197, 352/82.
G11C 11/34 (2006.01) H01L 21/20 (2006.01)
Patent
CA 1149952
- 18 - Abstract of the Disclosure A charge storage type semiconductor device comprising a semiconductor substrate and means for accu- mulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unne- cessary minority carriers from flowing into charge storage regions.
356652
Morimune Katuhiko
Sekine Hirokazu
Suzuki Nobuo
Watanabe Masaharu
Ridout & Maybee Llp
Tokyo Shibaura Denki Kabushiki Kaisha
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