Charge transfer device manufacture

Details Charge transfer device manufacture Charge transfer device manufacture

H - Electricity

01

L

356/197

H01L 27/10 (2006.01) H01L 21/00 (2006.01) H01L 21/339 (2006.01) H01L 21/8234 (2006.01) H01L 23/485 (2006.01) H01L 29/10 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1055159

ABSTRACT: The invention resides in a method of manufactor- ing a C.T.D. comprising overlapping clock electrodes mutually isolated or separated by an intermediate oxide. The surface of the semiconductor body is covered with an oxide layer and a nitride layer on top of the oxide layer. A first set of clock electrodes of polycrystalline silicon is provided on the nitride layer. These poly-electrodes are subjected to an oxidation treatment to form the said intermediate oxide. Dur- ing this oxidation, the gate oxide below the nitride layer does not become thicker, because of the nitride which ?ks the semiconductor body against the oxidation treatment. After the oxidation treatment, the nitride is removed partly, using the poly-electrodes as etching masks. In a subsequent step, a second set of clock electrodes between the poly- electrodes is provided on top of said gate oxide, said second clock electrodes overlapping partly the poly-electrodes and separated therefrom by a silicon oxide layer covering the poly- electrodes.

235924

Affiliated with

Also associated with

Rating

Charge transfer device manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge transfer device manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge transfer device manufacture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-935823