Chemical beam deposition method

Details Chemical beam deposition method Chemical beam deposition method

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 25/02 (2006.01) H01L 21/205 (2006.01) H01L 21/363 (2006.01)

Patent

CA 1270424

CHEMICAL BEAM DEPOSITION METHOD Abstract Epitaxial layers of semiconductor materials such as, e.g.. III-V and II-VI materials are deposited on a substrate under high-vacuum conditions. Molecules of a compound of a constituent of such material travel essentially line-of-sight towards the substrate admixed to a carrier gas such as, e.g., hydrogen. For III-V layers the use of compounds, such as, e.g., trimethyl- and triethylgallium, trimethyl- and triethylindium, triethylphosphine, and trimethylarsine is advantageous and economical in the manufacture of electronic and opto- electronic devices.

496551

Affiliated with

Also associated with

Rating

Chemical beam deposition method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical beam deposition method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical beam deposition method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1175733