Chemical mechanical planarization using nanodiamond

Details Chemical mechanical planarization using nanodiamond Chemical mechanical planarization using nanodiamond

C - Chemistry, Metallurgy

09

K

C09K 3/14 (2006.01)

Patent

CA 2755122

A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 .ANG./min to achieve a Ra of not greater than about 5.0 .ANG.. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt% water.

La présente invention concerne un procédé de polissage mécanochimique d'un substrat qui consiste à polir le substrat à un taux d'élimination de matière supérieure à environ 2,5 Å/min afin d'obtenir un Ra inférieur ou égal à environ 5,0 Å. Le substrat peut être un substrat du groupe III-V ou un substrat de SiC. Le polissage fait intervenir une suspension épaisse de polissage mécanochimique contenant des diamants ultra-dispersés et au moins 80 % en poids d'eau.

Affiliated with

Also associated with

Rating

Chemical mechanical planarization using nanodiamond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical mechanical planarization using nanodiamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical planarization using nanodiamond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1384102