Chemical mechanical polishing slurry and method for using same

Details Chemical mechanical polishing slurry and method for using same Chemical mechanical polishing slurry and method for using same

C - Chemistry, Metallurgy

09

G

C09G 1/02 (2006.01) C09K 3/14 (2006.01) H01L 21/302 (2006.01) H01L 21/321 (2006.01)

Patent

CA 2335035

An aqueous chemical mechanical polishing slurry useful for polishing the polysilicon layer of a semiconductor wafer comprising an aqueous solution of at least one abrasive, and at least one alcoholamine. The slurry preferably has a pH of from about 9.0 to about 10.5 and it includes an optional buffering agent.

La présente invention concerne une boue aqueuse de polissage mécano-chimique utilisée dans le polissage de la couche de polysilicium d'une tranche de semiconducteur, renfermant une solution aqueuse avec au moins un abrasif et au moins un alcoolamine. De préférence, la pâte a un pH compris entre environ 9,0 et environ 10,5 et renferme éventuellement un tampon.

Affiliated with

Also associated with

Rating

Chemical mechanical polishing slurry and method for using same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical mechanical polishing slurry and method for using same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing slurry and method for using same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1406122