C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) C23C 16/00 (2006.01) C23C 16/27 (2006.01) C23C 16/507 (2006.01)
Patent
CA 2122995
2122995 9308927 PCTABS00021 Chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having precursors that provide carbon and etchant species that removes graphite are disclosed. The selected compounds are reacted in a CVD apparatus in a plasma created by a confined rf discharge to produce diamond films on a substrate on susceptor (8). The plasma is confined in a reaction tube (9) between an inductive rf coil (2) via matching network (6). A gaseous mixture including at least 20 % water, providing an etchant species, is reacted with an alcohol, providing the carbon, at low temperature (300-650 ·C) and low pressure (0.1 to 10 Torr), preferably in the presence of an organic acid (acetic acid) which contributes etchant species. In the preferred embodiment the volumetric mixtures have typically been 40-80 % water and 60-20 % alcohol. The gaseous mixture of H2O and alcohol is disassociated to produce H, OH, and carbon radicals. Both OH and atomic H are capable of etching graphite from the depositing carbon layer.
Hendry Robert C.
Hudson George C.
Markunas Robert J.
Rudder Ronald A.
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
Research Triangle Institute
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