Chemical vapor deposition-production silicon carbide having...

Details Chemical vapor deposition-production silicon carbide having... Chemical vapor deposition-production silicon carbide having...

C - Chemistry, Metallurgy

23

C

C23C 16/32 (2006.01) C04B 35/571 (2006.01) C23C 16/01 (2006.01) C23C 16/44 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2104411

.beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400-1500°C range, pressure 50 torr or less, H2/methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 µm or less.

Carbure de bêta-silicium à transmission optique aux spectres visible et infrarouge est produit par déposition chimique en phase vapeur. Les conditions de déposition sont une amplitude thermique entre 1400 et 1500 C, une pression de 50 torr ou moins, un rapport molaire H2/méthyltrichlorosilane de 4-30 et un taux de déposition de 1 µm ou moins.

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