Chemical vapor deposition silicon and silicon carbide having...

Details Chemical vapor deposition silicon and silicon carbide having... Chemical vapor deposition silicon and silicon carbide having...

C - Chemistry, Metallurgy

30

B

C30B 28/14 (2006.01) C01B 31/36 (2006.01) C01B 33/02 (2006.01) C23C 16/24 (2006.01) C23C 16/32 (2006.01)

Patent

CA 2058809

CHEMICAL VAPOR DEPOSITION-PRODUCED SILICON AND SILICON CARBIDE HAVING IMPROVED OPTICAL PROPERTIES Abstract of the Disclosure The optical transmission of chemical vapor deposition-produced silicon is dramatically enhanced by annealing at temperatures in the range of from about 1300°C to about 1500°C. Chemical vapor deposited silicon carbide, which is not ordinarily transmitting of infrared light, may be made transmitting through annealing at temperatures in the range of from about 1800°C to about 2600°C.

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