Chemical vapour infiltration method with variable...

Details Chemical vapour infiltration method with variable... Chemical vapour infiltration method with variable...

C - Chemistry, Metallurgy

04

B

C04B 35/84 (2006.01) C04B 35/80 (2006.01) C04B 35/83 (2006.01) F16D 69/02 (2006.01)

Patent

CA 2217643

The infiltration conditions are changed between the start and the end of a chemical vapour infiltration process by varying at least one of the infiltration parameters, i.e. the dwell time of the gas phase, the pressure, the temperature, the precursor content of the gas phase, and the optional dopant content of the gas phase, whereby the infiltration conditions may be adapted to changes in the pore size of the substrate to control the microstructure of the material deposited within the substrate, and particularly to maintain a constant microstructure.

Entre le début et la fin du processus d'infiltration chimique en phase vapeur, on modifie les conditions d'infiltration en faisant varier l'un au moins des paramètres d'infiltration parmi la durée de séjour de la phase gazeuse, la pression, la température, le taux de précurseur dans la phase gazeuse, et le taux de dopant éventuel dans la phase gazeuse, de manière à adapter les conditions d'infiltration à l'évolution de la porométrie du substrat pour contrôler la microstructure du matériau déposé au sein du substrat, en particulier pour conserver une microstructure constante.

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