C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 25/18 (2006.01) H01L 29/768 (2006.01)
Patent
CA 2646893
Provided is a novel method for nucleating the growth of a diamond film. The method comprises providing a substrate having a diamondoid chemically attached to it, which serves as a superior nucleation site, and then facilitating the growth of the diamond film.
La présente invention concerne un nouveau procédé de nucléation de croissance d'un film de diamant. Le procédé comprend le fait de proposer un substrat ayant un diamantoïde chimiquement lié à celui-ci, qui sert de site de nucléation supérieur, et ensuite de faciliter la croissance du film de diamant.
Bokhari Wasiq
Carlson Robert M.
Dahl Jeremy E.
Liu Shenggao
Chevron U.s.a. Inc.
Sim & Mcburney
LandOfFree
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