Chemically sensitive fet component

Details Chemically sensitive fet component Chemically sensitive fet component

G - Physics

01

N

324/23

G01N 27/30 (2006.01) G01N 27/414 (2006.01) H01L 21/761 (2006.01)

Patent

CA 1224524

Abstract A chemically sensitive field-effect transistor (ISFET) component has enhanced insulation properties. The source and drain regions are provided in an island provided on a substrate, wherein the island is doped with a type of impurity opposite to that with which the substrate is doped. This defines a PN insulation junction between the island and the substrate.

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