Circuit containing integrated bipolar and complementary mos...

Details Circuit containing integrated bipolar and complementary mos... Circuit containing integrated bipolar and complementary mos...

H - Electricity

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356/125

H01L 21/82 (2006.01) H01L 21/763 (2006.01) H01L 21/8249 (2006.01) H01L 27/06 (2006.01)

Patent

CA 1282872

ABSTRACT OF THE DISCLOSURE A circuit which contains integrated bipolar and complementary MOS transistors, including wells in the substrate for forming the MOS transistors, the wells also containing isolated bipolar transistors, the wells forming the collector of the bipolar transistor and being surrounded by trenches which are filled with doped polycrystalline silicon. The doped trench reduces the lateral outward diffusion from the wells and thus serves to increase the packing density while serving as a collector terminal region. The invention is employed in the manufacture of integrated semiconductor circuits having high switching speeds.

544178

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