H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/786 (2006.01)
Patent
CA 2038960
21766-595 ABSTRACT A circuit element has a source region of a first con- ductance type, a first gate region portion of a conductance type opposed to the first conductance type, an intermediate region of the first conductance type, a second gate region portion of the second conductance type, and a drain region of the first conduc- tance type. The source region is provided with a cource terminal, the first gate region has a first gate terminal, the second gate region has a second gate terminal conductively connected to the first gate terminal and the drain region is provided with a drain terminal. The invention avoids the so-called KINK effect that occurs in MOSFETs at very low temperatures.
Colinge Jean Pierre
Gao Ming H.
Colinge Jean Pierre
Fetherstonhaugh & Co.
Gao Ming H.
Interuniversitair Micro-Elektronica Centrum Vzw
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