Circuit for generating the programming voltage for an...

G - Physics – 11 – C

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G11C 17/00 (2006.01) G11C 16/12 (2006.01) G11C 17/04 (2006.01)

Patent

CA 1235505

ABSTRACT: Circuit for generating the programming voltage for an erasable read-only memory. In order to prevent an excessively fast rise of the programming voltage for an (E)EPROM, a stage is inserted which on the one hand prevents voltage losses and which on the other realizes the required large time constant of the voltage rise in spite of the use of small capacitances.

472779

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