H - Electricity – 03 – K
Patent
H - Electricity
03
K
323/6
H03K 17/00 (2006.01) H01L 27/02 (2006.01) H01L 29/78 (2006.01) H03K 17/0812 (2006.01) H03K 19/00 (2006.01) H03K 19/003 (2006.01)
Patent
CA 1169922
CIRCUIT INCLUDING AN MOS TRANSISTOR WHOSE GATE IS PROTECTED FROM OXIDE RUPTURE ABSTRACT OF THE DISCLOSURE A protected MOS transistor circuit includes an input MOS transistor and a depletion mode MOS transistor having a drain-source current path connected between ground and the gate of the input MOS transistor for obviating rupture of the gate oxide of the input MOS transistor when power is off. The depletion mode MOS transistor's gate receives a control signal only when power is on which renders the depletion mode MOS transistor nonconductive when power is on. The depletion mode MOS transistor is conductive when power is off.
379974
Asano Masamichi
Iwahashi Hiroshi
Kobayashi Ichiro
Goudreau Gage Dubuc
Tokyo Shibaura Denki Kabushiki Kaisha
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