Circuit with improved efficiency and crest factor for...

Details Circuit with improved efficiency and crest factor for... Circuit with improved efficiency and crest factor for...

H - Electricity

05

B

H05B 41/282 (2006.01)

Patent

CA 2703371

A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.

L'invention porte sur un ballast à onduleur basé sur transistor à jonction bipolaire (BJT) alimenté en courant, lequel ballast comprend des circuits d'attaque de base configurés pour attaquer des commutateurs BJT respectifs, et des circuits limiteurs de courant de crête inverse d'attaque rapide, configurés pour fonctionner conjointement avec les circuits d'attaque de base respectifs.

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