H - Electricity – 03 – G
Patent
H - Electricity
03
G
179/2, 333/85
H03G 5/22 (2006.01) H03G 1/00 (2006.01) H03G 1/04 (2006.01) H03G 7/00 (2006.01) H03G 9/18 (2006.01) H03H 11/24 (2006.01)
Patent
CA 1277918
ABSTRACT CIRCUITS TO PROVIDE DESIRED CONDUCTANCE CHARACTERISTICS USING A FET The drain-source conductance of a wide variety of FETs can be made to conform to a prede- termined function of a control signal. The control signal is multiplied by a factor and an offset is added or subtracted therefrom to derive a modified control signal. The modified control signal is then applied to the gate of a FET. The factor and the offset are such that the drain-source conductance of the transistor is substantially the predetermined function of the control signal. When a desired attenuator characteristic defined with respect to a FET is to be provided using a FET having characteristics different from those of the reference FET, the control signal to the FET used can be similarly modified so that the desired attenuator characteristics are obtained. A dual path compressor or expander employing an attenuator (which includes a FET) in its further path can be made to conform to a desired compression or expansion characteristic defined with respect to a similar arrangement and with respect to a reference FET conductance control characteristic. This can be accomplished by making the conductance control characteristics of the FET to be used to conform to the desired conductance control characteristic.
520365
Dolby Laboratories Licensing Corporation
Fetherstonhaugh & Co.
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