B - Operations – Transporting – 08 – B
Patent
B - Operations, Transporting
08
B
B08B 3/12 (2006.01) H01L 21/30 (2006.01) H01L 21/306 (2006.01) H01L 21/3063 (2006.01)
Patent
CA 2206139
Provided is a suitable cleaning method of porous semiconductor substrate without occurrence of collapse of porous structure due to cavitation or resonance. In a cleaning method of porous surface of semiconductor substrate having the porous structure at least in the surface, cleaning for removing dust particles adhering to the porous surface of the substrate takes place with pure water on which a high-frequency wave with a frequency in the range of from 600 kHz to 2 MHz is superimposed.
Voici une méthode de nettoyage appropriée de substrat de semiconducteur poreux, sans risque d'effondrement de la structure poreuse à cause de cavitation ou de résonance. Selon cette méthode de nettoyage de surface poreuse de substrat de semiconducteur comportant une structure poreuse au moins en surface, le nettoyage pour ôter les particules de poussière qui adhèrent à la surface poreuse du substrat est effectué avec de l'eau pure à laquelle on applique une onde haute fréquence comprise dans la gamme de 600 kHz à 2 MHz.
Fujiyama Yasutomo
Kumomi Hideya
Canon Kabushiki Kaisha
Ridout & Maybee Llp
LandOfFree
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