Cleaning solutions and etchants and methods for using same

Details Cleaning solutions and etchants and methods for using same Cleaning solutions and etchants and methods for using same

C - Chemistry, Metallurgy

11

D

C11D 3/43 (2006.01) C11D 3/36 (2006.01) H01L 21/306 (2006.01) H01L 21/465 (2006.01)

Patent

CA 2544209

Composition for cleaning or etching a semiconductor substrate and method for using the same. The composition may include a fluorine-containing compound as an active agent such as a quaternary ammonium fluoride, a quaternary phosphonium fluoride, sulfonium fluoride, more generally an -onium fluoride or "multi" quaternary -onium fluoride that includes two or more quaternary -onium groups linked together by one or more carbon-containing groups. The composition may further include a pH adjusting acid such as a mineral acid, carboxylic acid, dicarboxylic acid, sulfonic acid, or combination thereof to give a pH of about 2 to 9. The composition can be anhydrous and may further include an organic solvent such as an alcohol, amide, ether, or combination thereof. The composition are useful for obtaining improved etch rate, etch selectivity, etch uniformity and cleaning criteria on a variety of substrates.

L'invention concerne une composition pour nettoyer ou pour graver un substrat semi-conducteur, et sa méthode d'utilisation. La composition peut comprendre un composé contenant du fluor, en tant que principe actif, notamment un fluorure d'ammonium quaternaire, un fluorure de phosphonium quaternaire, un fluorure de sulfonium, plus généralement un fluorure -onium ou un fluorure -onium "multi" quaternaire, comprenant au moins deux groupes -onium quaternaires reliés ensemble par au moins un groupe contenant du carbone. La composition peut également comprendre un acide d'ajustement de pH, notamment un acide minéral, un acide carboxylique, un acide dicarboxylique, un acide sulfonique ou une combinaison de ceux-ci pour donner un pH compris entre 2 et 9. Cette composition peut être anhydre et peut également comprendre un solvant organique, notamment un alcool, un amide, un éther ou une combinaison de ceux-ci. Cette combinaison est utile pour obtenir des améliorations au niveau de la vitesse de gravure, de la sélectivité de gravure, de l'uniformité de gravure et de critères de nettoyage sur une variété de substrats.

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