Closely spaced ic contact structure and manufacture

Details Closely spaced ic contact structure and manufacture Closely spaced ic contact structure and manufacture

H - Electricity

01

L

356/130

H01L 29/40 (2006.01) H01L 21/225 (2006.01) H01L 21/285 (2006.01) H01L 21/74 (2006.01) H01L 23/532 (2006.01) H01L 29/417 (2006.01)

Patent

CA 1042559

Abstract of the Disclosure Inverted frustum shaped polycrystalline semi- conductor layers are formed on the emitter and collector regions provided for one surface of a semiconductor substrate, and conductor layers are applied on the upper surfaces of the polycrystalline semiconductor surfaces to form emitter and collector electrodes thus providing a bipolar transistor for the integrated circuit device.

257488

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