Cmos flip flop memory element without crossover, and method...

Details Cmos flip flop memory element without crossover, and method... Cmos flip flop memory element without crossover, and method...

G - Physics

11

C

352/81

G11C 11/40 (2006.01) G11C 11/412 (2006.01)

Patent

CA 1046637

A B S T R A C T A static semiconductor storage element includes a flip-flop formed of a pair of complementary field effect transistors which are cross coupled without intersection to form a bistable circuit. One node of the flip-flop is connected to a terminal which is employed for both reading and writing functions. The flip-flop is set or reset by connection of an appropri- ate voltage to the node, and nondestructive read out is carried out by sensing the voltage level of the node.

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