Cmos linear image sensor operating by charge transfer

Details Cmos linear image sensor operating by charge transfer Cmos linear image sensor operating by charge transfer

H - Electricity

04

N

H04N 3/15 (2006.01) H04N 5/335 (2006.01)

Patent

CA 2663670

The invention relates to image sensors in the form of a signal-integrating, moving multi-line linear array for the synchronized reading of the same linear image in succession by N lines of P photo-sensitive pixels and the summation, pixel by pixel, of the signals read by the various lines. According to the invention, at the start of a photogenerated-charge integration time, the voltage is applied to the photodiode of the pixel of an intermediate line of rank i, this voltage being the output voltage of a pixel of a previous line of rank i-1, the photodiode is isolated, the charges due to the light are integrated therein and, finally, at the end of integration time, the charges on the photodiode are transferred to a storage node (N2) of the pixel. A charge-voltage conversion circuit (T4, T5) converts the charges on the storage node into a pixel output voltage. Thus, before photogenerated charges are integrated in each pixel, the photodiode receives a charge equivalent to an accumulation of charges coming from the previous pixel lines that observed the same line of the scene.

L'invention concerne les capteurs d'image en forme de barrette linéaire multilignes à défilement et intégration de signal, pour la lecture synchronisée d'une même image linéaire successivement par N lignes de P pixels photosensibles et la sommation pixel à pixel des signaux lus par les différentes lignes. Selon l'invention, au début d'un temps d'intégration de charges photogénérées, on applique à la photodiode du pixel d'une ligne intermédiaire de rang i la tension de sortie d'un pixel d'une ligne précédente de rang i-1, on isole la photodiode, on y intègre des charges dues à la lumière, et enfin, à la fin du temps d'intégration, on transfère dans un nAEud de stockage (N2) du pixel les charges de la photodiode. Un circuit de conversion charge-tension (T4, T5) transforme les charges du nAEud de stockage en une tension de sortie du pixel. Ainsi, avant d'intégrer dans chaque pixel des charges photogénérées, on déverse dans la photodiode une charge équivalente à un cumul de charges provenant des lignes de pixel précédentes qui ont observé la même ligne de scène.

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