Cmos process

Details Cmos process Cmos process

H - Electricity

01

L

H01L 21/336 (2006.01) H01L 21/8238 (2006.01) H01L 27/092 (2006.01)

Patent

CA 2396377

A high-voltage MOS transistor is produced in a low-voltage CMOS process without adding extra process steps for producing the high-voltage MOS transistor. The high-voltage MOS transistor is to be used as an analog line driver and is produced on the same silicon area as low-voltage AD/DA- converters. Hereby, the low-voltage and the high-voltage design block are directly compatible with each other, e.g. have the same threshold voltages, which simplifies the design of the total solution.

L'invention concerne un transistor MOS haute tension obtenu par une technique CMOS basse tension, et dont la production ne nécessite pas d'autres étapes de traitement. Le transistor MOS haute tension de l'invention s'utilise comme étage d'attaque de ligne analogique et se produit dans la même zone du silicium que des convertisseurs AN/NA basse tension. Par ce procédé, les blocs de conception haute tension et basse tension sont directement compatibles l'un avec l'autre, c'est-à-dire qu'ils présentent des tensions de seuil identiques, ce qui simplifie la conception de la solution totale.

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