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H01L 21/285 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01)
Patent
CA 1204045
- 13 - COBALT SILICIDE METALLIZATION FOR SEMICONDUCTOR TRANSISTORS Abstract of the Disclosure In order to form MOSFET structures, a cobalt layer is deposited and sintered, at about 400°C to 500°C, on a patterned semiconductor wafer having exposed polycrystalline or moncrystalline silicon portions, as well as exposed oxide portions. The cobalt reacts with exposed surfaces of the silicon portions and forms thereat such compounds as cobalt monosilicide or di-cobalt silicide (CO2Si), or a mixture of both. The unreacted cobalt is selectively removed, as by selective etching in a suitable acid bath. A heat treatment at about 700°C or more, preferably in an oxidizing ambient which contains typically about 2 percent oxygen, converts the cobalt compound(s) into relatively stable cobalt disilicide (CoSi2). Subsequently, deposition of an in situ doped layer of polycrystalline silicon (polysilicon) on the cobalt disilicide contacting the monocrystalline silicon portions -- followed by gettering, deposition of a layer of aluminum, and standard etch-patterning of the aluminum and polysilicon layers -- completes the metallization of the desired MOSFET structures on the silicon wafer.
407714
Levinstein Hyman J.
Murarka Shyam P.
Sinha Ashok K.
Kirby Eades Gale Baker
Western Electric Company Incorporated
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