Coincidentally selected bubble domain storage array

Details Coincidentally selected bubble domain storage array Coincidentally selected bubble domain storage array

G - Physics

11

C

352/37.2

G11C 11/14 (2006.01) G11C 19/08 (2006.01) G11C 19/28 (2006.01)

Patent

CA 1119297

COINCIDENTALLY SELECTED BUBBLE DOMAIN STORAGE ARRAY Abstract A magnetic bubble domain storage system comprising an array of rows and columns of logical chips, individual ones of which can be selected for writing in information or for reading out information. The logical bubble chips used for bubble domain storage (or logic) are organized into logical half-chips with even numbered bits (bits 2, 4, ...etc.) in one half-chip and odd numbered bits (bits 1, 3, 5 ... etc.) in the other half-chip. Alternating rows of half-chips are used for storing even numbered bits and odd numbered bits, respectively. Each half-chip has its own bubble domain generator, but a common generator current line serves all generators for a row of even half-chips and all generators for a row of odd half-chips. Thus, information is written into even half-chips and odd half-chips at the same time by pulsing the generator current line common to a row of even half-chips and a row of odd half-chips. Each half-chip has a sensing element and all the sensing elements corresponding to a row of half-chips are connected in series. The series connection of sensors in any row forms one leg of a bridge circuit, and another leg of the bridge circuit is another series connection of sensors in another row of the storage array. One of these legs corresponds to sensors from a row of even half-chips while the other leg corresponds to sensors from a row of odd half-chips. The other two legs of f the bridge circuit are comprised of dummy resistors. Even YO977-076 though two rows of sensors are connected to the same bridge circuit, even numbered bits and odd numbered bits will be read at alternating times. By proper pulsing of current carrying lines, used for the read operation, any half-chip out of those in the same row can be selected for read-out. Information can be written back into the half-chips in the same cycle in which information is read from these chips, by having a connection between the sense amplifiers and the generator current lines. Y0977-076

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