Cold cathode semiconductor device

Details Cold cathode semiconductor device Cold cathode semiconductor device

H - Electricity

01

J

356/119, 313/35.

H01J 37/317 (2006.01) H01J 1/308 (2006.01)

Patent

CA 1131795

1 PHN 9025 ABSTRACT: The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Said cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.

319908

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