H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/162
H01L 23/00 (2006.01) H01L 21/74 (2006.01) H01L 23/556 (2006.01)
Patent
CA 1200622
- 9 - COLLECTOR FOR RADIATION-GENERATED CURRENT CARRIERS IN A SEMICONDUCTOR STRUCTURE Abstract An n+ type buried grid layer at the interface of a p+ type semiconductor substrate and a p type epitaxial layer serves to absorb alpha particle induced charge and other stray charge in the epitaxial layer and substrate. The grid layer is spaced sufficiently from a major surface of the epitaxial layer so as not to have any significant adverse affect on circuits and/or devices fabricated on the major surface. Circuits and/or devices fabricated on the major surface of the epitaxial layer are thus at least partly protected against loss of information due to alpha particle hits and other stray leakage generators. When no epitaxial layer is used, the buried grid is formed below the major surface of the substrate into which circuits and/or device are fabricated.
415567
Kirby Eades Gale Baker
Western Electric Company Incorporated
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