Collector-up semiconductor structure and method

Details Collector-up semiconductor structure and method Collector-up semiconductor structure and method

H - Electricity

01

L

356/124, 336/30

H01L 27/08 (2006.01) H01L 21/74 (2006.01) H01L 21/8226 (2006.01) H01L 27/02 (2006.01) H01L 27/082 (2006.01) H01L 29/70 (2006.01)

Patent

CA 1038085

Abstract of the Disclosure A semiconductor structure and method for fabrication including a semiconductor body of one conductivity type having d major surface. A layer of opposite conductivity material is formed on said surface said layer having an upper planar surface generally parallel to said major surface. Spaced first and second collector regions are carried by said layer. A third region of one conductivity is formed in said layer spaced from said first and second regions and extending to an exposed surface of said layer. A fourth region of - opposite conductivity type is formed within said third region and extends to an exposed surface of said layer. The layer, third and fourth regions form the respective regions of an opposite conductivity - one conductivity - opposite conductivity type source transistor. Addi- tionally the body the layer and the first and second regions form the respective regions of a one conductivity - opposite conductivity - one conductivity switching transistor wherein said first and second regions form multiple collectors.

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