C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.3
C30B 29/60 (2006.01) C01B 33/035 (2006.01) C30B 25/02 (2006.01) C30B 25/08 (2006.01) C30B 25/10 (2006.01) C30B 25/14 (2006.01) C30B 25/18 (2006.01)
Patent
CA 1178179
C19-21-0283A COMBINATION GAS CURTAINS FOR CONTINUOUS CHEMICAL VAPOR DEPOSITION PRODUCTION OF SILICON BODIES ABSTRACT OF THE DISCLOSURE Apparatus and process for producing electronic- grade silicon bodies are disclosed wherein continuously-pulled slim rods which can be formed in situ from the reaction of a seed crystal and a molten silicon source, are pulled into and through a chemical vapor deposi- tion chamber, having in combination different gas curtains along the chamber inner wall, the slim rod surfaces being preheated before entry into the deposition chamber where the rods are simultaneously exposed to heating and thermally decomposable gaseous silicon compounds in order to provide suitable surface reaction conditions on the slim rods for the decomposition of the gaseous silicon compounds resulting in deposition growth upon the surfaces of the rods.
382629
Mcfadden Fincham
Solutia Inc.
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