Combination index/gain guided semiconductor lasers

Details Combination index/gain guided semiconductor lasers Combination index/gain guided semiconductor lasers

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Patent

CA 1325670

ABSTRACT A semiconductor laser is provided with one or more layers forming an active region for supporting radiation propogating under lasing conditions in an optical cavity established between transverse end facets of the laser. The active region is characterized by having a combination index and gain guiding region. The regions between the central region and the end facets may be provided with sufficiently thin active region thickness to form a synthetic transparent or quantum well wave- guide so as not to be radiation absorbing due to the quantization of electron states.

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