Compact combiner for semiconductor devices operating in the...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

333/41, 356/69

H01L 23/66 (2006.01) H03B 9/14 (2006.01)

Patent

CA 1242772

ABSTRACT OF THE DISCLOSURE The invention relates to a compact combiner for ultra-high frequency semiconductor devices, such as negative resistance diodes (Gunn-Impatt). The combiner according to the invention combines on a base: - in the centre at least one semiconductor pellet or a plurality of semiconductor devices integrated into a single pellet; - a first ring of capacitors as located elements, a second dielectric material ring metallized on two opposite planar faces, forming both a second capacitor and part of the encapsulation box of the combiner; - metal tapes ensuring the connections between the active components and the capacitors and simultaneously forming non-located element chokes. A metal cover welded to the outer ring seals the box and supplies the bias. Application to ultra-high frequency amplifiers and oscillators.

478576

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Compact combiner for semiconductor devices operating in the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compact combiner for semiconductor devices operating in the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compact combiner for semiconductor devices operating in the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1318799

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.