H - Electricity – 03 – F
Patent
H - Electricity
03
F
328/169, 330/21
H03F 3/16 (2006.01) H03F 3/45 (2006.01) H03K 3/356 (2006.01)
Patent
CA 1180395
ABSTRACT OF THE DISCLOSURE A metal-oxide-silicon (MOS) field effect transistor (FET) regenerative differential comparator circuit particularly suited for use in sigma-delta modulation apparatus. The circuit includes two differential ampli- fier stages followed by a latching amplifier stage. A regenerative latching section of two cross-connected latching FET's is connected to the latching amplifier stage. Each of the latching FET's is connected in series with a separate switching FET. A strobe pulse turns on the two switching FET's enabling the latching FET's. Depending on the relative polarity of the differential voltage produced by the latching amplifier stage, regenerative action drives one of the two latching FET's into heavy conduction thereby producing an appropriate digital output. The first two differential amplifier stages remain enabled during the regenerative action permitting high speed operation.
416978
Gte Laboratories Incorporated
R. William Wray & Associates
LandOfFree
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