Complementary enhancement mode mos transistor structure with...

Details Complementary enhancement mode mos transistor structure with... Complementary enhancement mode mos transistor structure with...

H - Electricity

01

L

356/125

H01L 21/18 (2006.01)

Patent

CA 1058328

COMPLEMENTARY ENHANCEMENT MODE MOS TRANSISTOR STRUCTURE WITH SILICON GATE Abstract of the Disclosure A p+ doped silicon gate metal oxide comple- mentary transistor structure fabricated on a p-type substrate of semiconductor material with an insulating layer of silicon dioxide on the surface of the substrate and an outer layer of glass disposed over the insulating layer, An intermediate layer of electrically conductive p+ doped polycrystalline silicon is disposed between the layers of silicon dioxide and glass, This layer forms the silicon gate for enhancement mode complementary MOS transistors.

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