Complementary field effect transistor having p doped silicon...

Details Complementary field effect transistor having p doped silicon... Complementary field effect transistor having p doped silicon...

H - Electricity

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H01L 21/22 (2006.01) H01L 21/8238 (2006.01) H01L 27/092 (2006.01) H01L 29/00 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1061012

COMPLEMENTARY FIELD EFFECT TRANSISTOR HAVING P DOPED SILICON GATES AND PROCESS FOR MAKING THE SAME ABSTRACT An insulated gate complementary field effect transistor integrated circuit uses silicon as the gate electrode. The gates of both N- and P- channel transistors are doped with P type impurities, thereby balancing the voltage threshold characteristics of the transistors. After the P type diffusions are completed, a dip etch is used in the process to open the windows for the N type diffusions, thereby avoiding the necessity for applying photo-resist as a mask.

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