Complementary field-effect transistor integrated circuit device

Details Complementary field-effect transistor integrated circuit device Complementary field-effect transistor integrated circuit device

H - Electricity

01

L

356/126

H01L 27/04 (2006.01) H01L 27/092 (2006.01)

Patent

CA 1155237

Lepselt-49 - 12 - COMPLEMENTARY FIELD-EFFECT TRANSISTOR INTEGRATED CIRCUIT DEVICE Abstract of the Disclosure A CMOS integrated circuit structure which is not susceptible to latchup utilizes insulated-gate field-effect transistors having Schottky barrier source and drains (SB- IGFET). In the preferred embodiment, the n-channel device of an adjacent complementary pair of transistors in a CMOS circuit is provided with diffused source and drain while the p-channel device of the pair is provided with PtSi-Si Schottky barrier contact source and drain. Such a structure completely eliminates the parasitic pnpn structure which causes the latchup problem in conventional CMOS structures.

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