G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.4
G11C 11/24 (2006.01) G11C 11/404 (2006.01) H01L 27/06 (2006.01) H01L 27/108 (2006.01)
Patent
CA 1314991
YO987-103 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND ONE-CAPACITOR DYNAMIC-RANDOM-ACCESS MEMORY CELL AND FABRICATION PROCESS THEREFOR ABSTRACT OF THE INVENTION A complementary MOS one-capacitor dynamic RAM cell which operates with a non-boosted wordline without a threshold loss problem and which includes one storage capacitor and n- and p-type transfer devices connected to the storage capacitor which function as two complementary transistor devices having gates controlled by complementary signals on the RAM wordlines.
600744
Dhong Sang H.
Henkels Walter H.
Lu Nicky C.-C.
International Business Machines Corporation
Rosen Arnold
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