Complementary transistor structure and method of...

Details Complementary transistor structure and method of... Complementary transistor structure and method of...

H - Electricity

01

L

356/125

H01L 27/02 (2006.01) H01L 27/00 (2006.01) H01L 27/082 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1046167

ABSTRACT: A monolithic semiconductor device comprising at least two complementary transistors. The device is characterized in that the base zone of the first transistor and the collector zone of the second transistor are manufactured in a first epi- taxial layer, while the emitter zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor are manu- factured in a second epitaxial layer in which a se- paration groove is provided. Application in Darlington type amplifiers (Fig. 2). - 29 -

243151

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