Component and method for the production thereof

H - Electricity – 01 – L

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H01L 21/60 (2006.01) H01L 23/485 (2006.01)

Patent

CA 2377628

A substrate (1) is provided with a mainly copper layer (2). A wire (3) is joined to the copper layer (2) by means of bonding and by formation of an intermetallic compound, whereby a hard layer (5) which is applied to the mainly copper layer (2) is broken up in the bond area. The hard layer is stable at a temperature of at least 80 ~C. At this temperature said layer acts as an oxygen diffusion barrier, acting upon aluminium in a manner similar to an aluminium oxide layer which is formed in a normal environment.

La présente invention concerne un substrat (1) recouvert d'une couche principalement constituée de cuivre (2). Un fil (3) est relié à la couche de cuivre (2) par métallisation et formation d'une liaison intermétallique. Une couche dure (5) recouvrant la couche principalement constituée de cuivre (2) est transpercée au niveau de la métallisation. La couche dure qui est stable à une température d'au moins 80 ·C sert, à cette température, de barrière à diffusion d'oxygène et a une action sur l'aluminium similaire à celle d'une couche d'oxyde d'aluminium se formant dans un environnment normal.

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